PART |
Description |
Maker |
MRF7S19100N |
1930?1990 MHz, 29 W Avg., 28 V Single W?CDMA Lateral N?Channel RF Power MOSFETs From old datasheet system
|
Motorola Semiconductor Products
|
MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S191 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
Freescale Semiconductor, Inc MOTOROLA
|
MAFR-000086-PS1C1T |
Single Junction Drop-In Circulator 1930 MHz-1990 MHz
|
M/A-COM Technology Solutions, Inc.
|
GSC341-HYB1900 |
1850 MHz - 1990 MHz RF/MICROWAVE 90 DEGREE HYBRID COUPLER
|
|
AGR19030EF |
30 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
MAFRIN0540 |
Single Junction Drop-In Circulator 1930 MHz-1990 MHz
|
M/A-COM Technology Solutions, Inc.
|
SPA1900/65/11/0/V-N-B |
1850 MHz - 1990 MHz BASE STATION/BROADCAST TRANSMISSION ANTENNA, 11 dBi GAIN, 65 deg 3dB BEAMWIDTH
|
HIROSE ELECTRIC Co., Ltd.
|
PCS-09015-4DM |
1710 MHz - 1990 MHz BASE STATION/BROADCAST TRANSMISSION ANTENNA, 16.6 dBi GAIN, 90 deg 3dB BEAMWIDTH
|
CommScope, Inc.
|
PCSD19-06513-0D |
1850 MHz - 1990 MHz BASE STATION/BROADCAST TRANSMISSION ANTENNA, 15.5 dBi GAIN, 65 deg 3dB BEAMWIDTH
|
CommScope, Inc.
|